SKU:88481706924
SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 26 - Jul 31
Description
SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )PSpecifications Device Layer Diameter: 6" Type Dopant: N type P doped Orientation: <1 0 0>+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer
MgAl2O4 single crystal substrate
Size: 10 mm x 5 mm x1
One disc containing the temperature control software and USB to RS485 driver compatible with Windows XP/Vista/Win7/8/10
Edge Orientation: No
Travel Distance 60mm Pressure Please note no pressure display on the pressing machine
Dry Room The small dry room is modified by a greenhouse
4-20 mA Isolation Dielectric strength to 2500V transient per 3mm spacing based on EN 61010 for 260Vrms or DC working voltage Input Protection Voltage Input = 120 Vrms max
8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (pls click a picture below 1-2 to enlarge)
and 1200ºC for continuous heating
LCD display and simple control interface provides easy programming of mixing operations
Heating Rate: 5ºC/minute recommended
5MPa -- to ensure the can does not explode)
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Exchange/Return Notes
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