SKU:13520356589

Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

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Regular price $54.05 USD
Regular price $102.05 USD Sale price $54.05 USD
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Ships within 48 hours · Estimated delivery Jul 25 - Jul 30

Description

Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cmSingle crystal Si (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 5 0. 525mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro

Click to learn more at MTI Gas Related page

0 ( Mohns)

Area Density:             10

In case of fracture or debonding

With lid closed: 340mm(L) × 300mm(W) × 400mm(H)

Trimming Length: 200mm

a thin solution layer is then spread and formed evenly on the substrate

such as plastics

and cooling rate

( Hydraulic press can reach 10 mitric ton )

Color:            white

EQ-FM-100CC

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