SKU:98121624100
Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:1-10 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 26 - Jul 31
Description
Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:1-10 ohm.cmSingle crystal Silicon Conductive type: N type P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer
Right flange: one 3/8" barbed needle valve
including crucibles
Two electrode feed-throughs are inserted inside the vessel to measure battery properties
You may order a load sensor to display pressure (click Pic
Resistivity: 0
Substrate dimension: 200mm x 100mm x 0
A tube block is required behind each flange to avoid the silicone O-rings melting
4E17/ cm3
Time interval: 1 - 900s Max
P_(actual on the working piece )=(P_( GDPV)/26
PV & SV display
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Exchange/Return Notes
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